IRFPS59N60C 11/2/99 www.irf.com 1 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 59 i d @ t c = 100c continuous drain current, v gs @ 10v 37 a i dm pulsed drain current ? 240 p d @t c = 25c power dissipation 390 w linear derating factor 3.1 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt ? tbd v/ns t j operating junction and -40 to + 150 t stg storage temperature range -55 to + 150 soldering temperature, for 10 seconds 300 (1.6mm from case ) recommended clip force 20 n smps mosfet hexfet ? power mosfet absolute maximum ratings l switch mode power supply (smps) l uninterruptible power supply l high speed power switching benefits applications l low gate charge qg reduces drive required l improved gate resistance for faster switching l fully characterized capacitance and avalanche voltage and current l lowest conduction loss in package outline l effective c oss specified (see an 1001) v dss r ds(on) max i d 600v 0.045 w 59a applicable off line smps topologies: l power factor correction boost l full bridge pd - 90380 super - 247? provisional
IRFPS59N60C 2 www.irf.com parameter typ. max. units e as single pulse avalanche energy ? CCC tbd mj i ar avalanche current ? CCC 35 a e ar repetitive avalanche energy ? CCC 39 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 35a, v gs = 0v ? t rr reverse recovery time CCC 770 1150 ns t j = 25c, i f = 35a q rr reverse recoverycharge CCC 20 30 c di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 59 240 a parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.43 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.045 w v gs = 10v, i d = 35a ? v gs(th) gate threshold voltage 4.0 CCC 6.0 v v ds = v gs , i d = 250a CCC CCC 100 a v ds = 600v, v gs = 0v CCC CCC 500 v ds = 480v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current parameter typ. max. units r q jc junction-to-case CCC 0.32 r q cs case-to-sink, flat, greased surface 0.24 CCC c/w r q ja junction-to-ambient CCC 40 thermal resistance parameter min. typ. max. units conditions g fs forward transconductance 35 CCC CCC s v ds = 50v, i d = 35a q g total gate charge CCC CCC 490 i d = 35a q gs gate-to-source charge CCC CCC 100 nc v ds = 360v q gd gate-to-drain ("miller") charge CCC CCC 250 v gs = 10v ? t d(on) turn-on delay time CCC 33 CCC v dd = 300v t r rise time CCC 110 CCC i d = 35a t d(off) turn-off delay time CCC 86 CCC r g = 1.0 w t f fall time CCC 18 CCC r d = 8.5 w ? c iss input capacitance CCC 10490 CCC v gs = 0v c oss output capacitance CCC 5140 CCC v ds = 25v c rss reverse transfer capacitance CCC 280 CCC pf ? = 1.0mhz, c oss output capacitance CCC 24050 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 220 CCC v gs = 0v, v ds = 480v, ? = 1.0mhz c oss eff. effective output capacitance CCC 370 CCC v gs = 0v, v ds = 0v to 480v ? dynamic @ t j = 25c (unless otherwise specified) ns
IRFPS59N60C www.irf.com 3 super-247? package outline world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 11/99 ? repetitive rating; pulse width limited by max. junction temperature. ? i sd tbda, di/dt tbda/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = tbdmh r g = 25 w , i as = 59a, dv/dt=tbd v/ns. ? pulse width 300s; duty cycle 2%.
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